Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range

Identifieur interne : 000F45 ( Russie/Analysis ); précédent : 000F44; suivant : 000F46

InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range

Auteurs : RBID : Pascal:99-0074079

Descripteurs français

English descriptors

Abstract

Room-temperature LEDs. fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3μm), carbon dioxide (4.3μm) and nitric oxide (5.3 μm) optical detection. Output power as high as 50μW (I. = 1 A, 128μs) and FWHM as small as 0.6μm have been obtained for the first reported InAsSb LED emitting at 5.5μm.

Links toward previous steps (curation, corpus...)


Links to Exploration step

Pascal:99-0074079

Le document en format XML

<record>
<TEI>
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en" level="a">InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range</title>
<author>
<name sortKey="Matveev, B" uniqKey="Matveev B">B. Matveev</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Ioffe Physico-Technical Institute, Politechnicheskaya 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg, 194021</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Zotova, N" uniqKey="Zotova N">N. Zotova</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Ioffe Physico-Technical Institute, Politechnicheskaya 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg, 194021</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Karandashov, S" uniqKey="Karandashov S">S. Karandashov</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Ioffe Physico-Technical Institute, Politechnicheskaya 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg, 194021</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Remennyi, M" uniqKey="Remennyi M">M. Remennyi</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Ioffe Physico-Technical Institute, Politechnicheskaya 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg, 194021</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Il Inskaya, N" uniqKey="Il Inskaya N">N. Il Inskaya</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Ioffe Physico-Technical Institute, Politechnicheskaya 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg, 194021</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Stus, N" uniqKey="Stus N">N. Stus</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Ioffe Physico-Technical Institute, Politechnicheskaya 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg, 194021</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Shustov, V" uniqKey="Shustov V">V. Shustov</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Ioffe Physico-Technical Institute, Politechnicheskaya 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg, 194021</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Talalakin, G" uniqKey="Talalakin G">G. Talalakin</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Ioffe Physico-Technical Institute, Politechnicheskaya 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg, 194021</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Malinen, J" uniqKey="Malinen J">J. Malinen</name>
<affiliation wicri:level="1">
<inist:fA14 i1="02">
<s1>VTT Electronics, Optoelectronics Laboratory, PO Box 1100</s1>
<s2>90571, Oulu</s2>
<s3>FIN</s3>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Finlande</country>
<wicri:noRegion>90571, Oulu</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt>
<idno type="inist">99-0074079</idno>
<date when="1998">1998</date>
<idno type="stanalyst">PASCAL 99-0074079 INIST</idno>
<idno type="RBID">Pascal:99-0074079</idno>
<idno type="wicri:Area/Main/Corpus">015A83</idno>
<idno type="wicri:Area/Main/Repository">016E82</idno>
<idno type="wicri:Area/Russie/Extraction">000F45</idno>
</publicationStmt>
<seriesStmt>
<idno type="ISSN">1350-2433</idno>
<title level="j" type="abbreviated">IEE proc., Optoelectron.</title>
<title level="j" type="main">IEE proceedings. Optoelectronics</title>
</seriesStmt>
</fileDesc>
<profileDesc>
<textClass>
<keywords scheme="KwdEn" xml:lang="en">
<term>Binary compound</term>
<term>Indium Antimonides</term>
<term>Indium Arsenides</term>
<term>Indium Phosphides</term>
<term>Infrared detection</term>
<term>Light emitting diode</term>
<term>Mid infrared radiation</term>
<term>Performance characteristic</term>
<term>Quaternary compound</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>Diode électroluminescente</term>
<term>Composé binaire</term>
<term>Indium Arséniure</term>
<term>Composé quaternaire</term>
<term>Indium Antimoniure</term>
<term>Indium Phosphure</term>
<term>Rayonnement IR moyen</term>
<term>Détection IR</term>
<term>Caractéristique fonctionnement</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">Room-temperature LEDs. fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3μm), carbon dioxide (4.3μm) and nitric oxide (5.3 μm) optical detection. Output power as high as 50μW (I. = 1 A, 128μs) and FWHM as small as 0.6μm have been obtained for the first reported InAsSb LED emitting at 5.5μm.</div>
</front>
</TEI>
<inist>
<standard h6="B">
<pA>
<fA01 i1="01" i2="1">
<s0>1350-2433</s0>
</fA01>
<fA03 i2="1">
<s0>IEE proc., Optoelectron.</s0>
</fA03>
<fA05>
<s2>145</s2>
</fA05>
<fA06>
<s2>5</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG">
<s1>InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG">
<s1>Mid-IR devices and materials</s1>
</fA09>
<fA11 i1="01" i2="1">
<s1>MATVEEV (B.)</s1>
</fA11>
<fA11 i1="02" i2="1">
<s1>ZOTOVA (N.)</s1>
</fA11>
<fA11 i1="03" i2="1">
<s1>KARANDASHOV (S.)</s1>
</fA11>
<fA11 i1="04" i2="1">
<s1>REMENNYI (M.)</s1>
</fA11>
<fA11 i1="05" i2="1">
<s1>IL'INSKAYA (N.)</s1>
</fA11>
<fA11 i1="06" i2="1">
<s1>STUS (N.)</s1>
</fA11>
<fA11 i1="07" i2="1">
<s1>SHUSTOV (V.)</s1>
</fA11>
<fA11 i1="08" i2="1">
<s1>TALALAKIN (G.)</s1>
</fA11>
<fA11 i1="09" i2="1">
<s1>MALINEN (J.)</s1>
</fA11>
<fA12 i1="01" i2="1">
<s1>HAYWOOD (Stephanie)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01">
<s1>Ioffe Physico-Technical Institute, Politechnicheskaya 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="02">
<s1>VTT Electronics, Optoelectronics Laboratory, PO Box 1100</s1>
<s2>90571, Oulu</s2>
<s3>FIN</s3>
<sZ>9 aut.</sZ>
</fA14>
<fA15 i1="01">
<s1>School of Engineering, University of Hull</s1>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA20>
<s1>254-256</s1>
</fA20>
<fA21>
<s1>1998</s1>
</fA21>
<fA23 i1="01">
<s0>ENG</s0>
</fA23>
<fA43 i1="01">
<s1>INIST</s1>
<s2>7573J</s2>
<s5>354000073034570010</s5>
</fA43>
<fA44>
<s0>0000</s0>
<s1>© 1999 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45>
<s0>14 ref.</s0>
</fA45>
<fA47 i1="01" i2="1">
<s0>99-0074079</s0>
</fA47>
<fA60>
<s1>P</s1>
<s2>C</s2>
</fA60>
<fA61>
<s0>A</s0>
</fA61>
<fA64 i2="1">
<s0>IEE proceedings. Optoelectronics</s0>
</fA64>
<fA66 i1="01">
<s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>Room-temperature LEDs. fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3μm), carbon dioxide (4.3μm) and nitric oxide (5.3 μm) optical detection. Output power as high as 50μW (I. = 1 A, 128μs) and FWHM as small as 0.6μm have been obtained for the first reported InAsSb LED emitting at 5.5μm.</s0>
</fC01>
<fC02 i1="01" i2="X">
<s0>001D03F15</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE">
<s0>Diode électroluminescente</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG">
<s0>Light emitting diode</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA">
<s0>Diodo electroluminescente</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE">
<s0>Composé binaire</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG">
<s0>Binary compound</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA">
<s0>Compuesto binario</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE">
<s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG">
<s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA">
<s0>Indio Arseniuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE">
<s0>Composé quaternaire</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG">
<s0>Quaternary compound</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA">
<s0>Compuesto cuaternario</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE">
<s0>Indium Antimoniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG">
<s0>Indium Antimonides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA">
<s0>Indio Antimoniuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE">
<s0>Indium Phosphure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG">
<s0>Indium Phosphides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA">
<s0>Indio Fosfuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE">
<s0>Rayonnement IR moyen</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG">
<s0>Mid infrared radiation</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA">
<s0>Radiación infrarroja media</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE">
<s0>Détection IR</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG">
<s0>Infrared detection</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA">
<s0>Detección IR</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE">
<s0>Caractéristique fonctionnement</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG">
<s0>Performance characteristic</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA">
<s0>Característica funcionamiento</s0>
<s5>09</s5>
</fC03>
<fN21>
<s1>039</s1>
</fN21>
</pA>
<pR>
<fA30 i1="01" i2="1" l="ENG">
<s1>MIOMD '98: international conference on "Mid-IR Optoelectronics: Materials and Devices"</s1>
<s2>2</s2>
<s3>Prague CZE</s3>
<s4>1998-03</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000F45 | SxmlIndent | more

Ou

HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000F45 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:99-0074079
   |texte=   InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024